BUK9675-100A_15 datasheet(5/12 Pages) PHILIPS

Part #	BUK9675-100A

Description	N-channel TrenchMOS logic level FET

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NXP Semiconductors

BUK9675-100A

N-channel TrenchMOS logic level FET

BUK9675-100A

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Product data sheet

18 August 2015

5 / 12

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ID = 0.25 mA; VGS = 0 V; Tj = 25 °C

100

-

V

V(BR)DSS

drain-source

breakdown voltage

ID = 0.25 mA; VGS = 0 V; Tj = -55 °C

89

-

V

ID = 1 mA; VDS = VGS; Tj = 175 °C;

Fig. 10

0.5

-

V

ID = 1 mA; VDS = VGS; Tj = 25 °C;

Fig. 10; Fig. 11

1

1.5

2

V

VGS(th)

gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;

Fig. 10

-

2.3

V

VDS = 100 V; VGS = 0 V; Tj = 175 °C

-

500

µA

IDSS

drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 25 °C

-

0.05

10

µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

IGSS

gate leakage current

VGS = -10 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

VGS = 10 V; ID = 10 A; Tj = 25 °C;

Fig. 12

-

55

72

mΩ

VGS = 5 V; ID = 10 A; Tj = 175 °C;

Fig. 13

-

188

mΩ

VGS = 4.5 V; ID = 10 A; Tj = 25 °C;

Fig. 12

-

61

84

mΩ

RDSon

drain-source on-state

resistance

VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 12

-

60

75

mΩ

Dynamic characteristics

QG(tot)

total gate charge

-

24.3

-

nC

QGS

gate-source charge

-

3

-

nC

QGD

gate-drain charge

ID = 10 A; VDS = 80 V; VGS = 5 V;

Fig. 14; Fig. 15

-

12.2

-

nC

Ciss

input capacitance

-

1278

1704

pF

Coss

output capacitance

-

129

155

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 16

-

88

120

pF

td(on)

turn-on delay time

-

13

20

ns

tr

rise time

-

120

168

ns

td(off)

turn-off delay time

-

58

87

ns

tf

fall time

VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;

RG(ext) = 10 Ω; Tj = 25 °C

-

57

86

ns

LD

internal drain

inductance

from drain lead 6 mm from package to

centre of die; Tj = 25 °C

-

4.5

-

nH

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