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BUK9880-55A Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK9880-55A Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors BUK9880-55A N-channel TrenchMOS logic level FET BUK9880-55A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 19 March 2014 7 / 13 03aa36 10-6 10-5 10-4 10-3 10-2 10-1 0 1 2 3 VGS (V) ID (A) max typ min Tj = 25 °C; VDS = 5 V Fig. 8. Sub-threshold drain current as a function of gate-source voltage 03nc48 0 2 4 6 8 10 12 0 5 10 15 20 ID (A) gfs (S) Fig. 9. Forward transconductance as a function of drain current; typical values 03nc49 0 5 10 15 0 1 2 3 4 VGS (V) ID (A) Tj = 150 °C Tj = 25 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03nc47 0 1 2 3 4 5 0 5 10 15 QG (nC) VGS (V) VDS = 44 V VDS = 14 V Fig. 11. Gate-source voltage as a function of turn-on gate charge; typical values |
Similar Part No. - BUK9880-55A_15 |
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Similar Description - BUK9880-55A_15 |
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