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OM55N10SC Datasheet(PDF) 6 Page - International Rectifier |
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OM55N10SC Datasheet(HTML) 6 Page - International Rectifier |
6 / 8 page OM75N05SA (T C = 25°C unless otherwise specified) Avalanche Characteristics Min. Typ. Max. Units Test Conditions I AR Avalanche Current 70 A (repetitive or non-repetitive,T J = 25°C) E AS Single Pulse Avalanche Energy 900 mJ (starting T J = 25°C, I D = IAR, VDD = 25 V) E AR Repetitive Avalanche Energy 200 mJ (pulse width limited by T j max, d < 1%) I AR Avalanche Current 40 A (repetitive or non-repetitive, T J = 100°C) Electrical Charactreristics - OFF V (BR)DSS Drain-Source 50 V I D = 250 µA, VGS = 0 Breakdown Voltage I DSS Zero Gate Voltage 250 µA V DS = Max. Rat. Drain Current (V GS = 0) 1000 µA V DS = Max. Rat. x 0.8, TC = 125°C I GSS Gate-Body Leakage ±100 nA V GS = ±20 V Current (V DS = 0) Electrical Charactreristics - ON V GS(th) Gate Threshold Voltage 2 4 V V DS = VGS, ID = 250 µA R DS(on) Static Drain-Source On 0.018 V GS = 10 V, ID = 40 A Resistance 0.036 T C = 100°C I D(on) On State Drain Current 75 A V DS > ID(on) x RDS(on)max, VGS = 10 V Electrical Charactreristics - Dynamic g fs Forward Transconductance 25 S V DS > ID(on) x RDS(on)max, ID= 40 A C ies Input Capacitance 4100 pF V DS = 25 V C oes Output Capacitance 1800 pF V GS = 0 C res Reverse Transfer Capacitance 420 pF f = 1 mHz Electrical Charactreristics - Switching On T d(on) Turn-On Time 190 nS V DD = 20 V, ID = 40 A t r Rise Time 900 nS R G = 50 , VGS = 10 V (di/dt) on Turn-On Current Slope 150 A/µS V DD = 20 V, ID = 40 A R G = 50 , VGS = 10 V Q g Total Gate Charge 130 nC V DD = 20 V, ID = 40 A, VGS = 10 V Electrical Charactreristics - Switching Off T r(Voff) Off Voltage Rise Time 360 nS V DD = 35 V, ID = 75 A t f Fall Time 280 nS R G = 50 , VGS = 10 V t cross Cross-Over Time 600 nS Electrical Charactreristics - Source Drain Diode I SD Source Drain Current 75 A I SDM(*) Source Drain Current (pulsed) 300 A V SD Forward On Voltage 1.5 V I SD = 75 A, VGS = 0 t rr Reverse Recovery Time 120 nS I SD = 75 A, di/dt = 100 A/µs V R = 20 V Q rr Reverse Recovery Charge 0.45 µC I RRM Reverse Recovery Current 6.5 A *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. D.U.T. R L 2200 µF 3.3 µF V DD V D R S V DS F W AA A B B D S G G D S L = 100µH D.U.T. 85 3.3 µF 1000 µF V DS R C + – MOS Diode FAST Diode 25 B – TEST CIRCUIT FOR INDUCTIVE LOAD SWITCHING AND DIODE REVERSE RECOVERY TIME SWITCHING TIMES TEST CIRCUITS FOR RESISTIVE LOAD |
Similar Part No. - OM55N10SC_15 |
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Similar Description - OM55N10SC_15 |
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