OM55N10SC_15 datasheet(6/8 Pages) IRF

Part #	OM55N10SC

Description	Isolated Hermetic Metal Packages

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Manufacturer	IRF [International Rectifier]

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OM75N05SA (T

C = 25°C unless otherwise specified)

Avalanche Characteristics

Min.

Typ. Max. Units Test Conditions

I

AR

Avalanche Current

70

A

(repetitive or

non-repetitive,T

J = 25°C)

E

AS

Single Pulse Avalanche Energy

900

mJ

(starting T

J = 25°C,

I

D = IAR, VDD = 25 V)

E

AR

Repetitive Avalanche Energy

200

mJ

(pulse width limited

by T

j max, d < 1%)

I

AR

Avalanche Current

40

A

(repetitive or

non-repetitive, T

J = 100°C)

Electrical Charactreristics - OFF

V

(BR)DSS

Drain-Source

50

V

I

D = 250 µA, VGS = 0

Breakdown Voltage

I

DSS

Zero Gate Voltage

250

µA

V

DS = Max. Rat.

Drain Current (V

GS = 0)

1000

µA

V

DS = Max. Rat. x 0.8, TC = 125°C

I

GSS

Gate-Body Leakage

±100

nA

V

GS = ±20 V

Current (V

DS = 0)

Electrical Charactreristics - ON

V

GS(th)

Gate Threshold Voltage

2

4

V

DS = VGS, ID = 250 µA

R

DS(on)

Static Drain-Source On

0.018

V

GS = 10 V, ID = 40 A

Resistance

0.036

T

C = 100°C

I

D(on)

On State Drain Current

75

A

V

DS > ID(on) x RDS(on)max, VGS = 10 V

Electrical Charactreristics - Dynamic

g

fs

Forward Transconductance

25

S

V

DS > ID(on) x RDS(on)max, ID= 40 A

C

ies

Input Capacitance

4100

pF

V

DS = 25 V

C

oes

Output Capacitance

1800

pF

V

GS = 0

C

res

Reverse Transfer Capacitance

420

pF

f = 1 mHz

Electrical Charactreristics - Switching On

T

d(on)

Turn-On Time

190

nS

V

DD = 20 V, ID = 40 A

t

r

Rise Time

900

nS

R

G = 50 , VGS = 10 V

(di/dt)

on

Turn-On Current Slope

150

A/µS

V

DD = 20 V, ID = 40 A

R

G = 50 , VGS = 10 V

Q

g

Total Gate Charge

130

nC

V

DD = 20 V, ID = 40 A, VGS = 10 V

Electrical Charactreristics - Switching Off

T

r(Voff)

Off Voltage Rise Time

360

nS

V

DD = 35 V, ID = 75 A

t

f

Fall Time

280

nS

R

G = 50 , VGS = 10 V

t

cross

Cross-Over Time

600

nS

Electrical Charactreristics - Source Drain Diode

I

SD

Source Drain Current

75

A

I

SDM(*)

Source Drain Current (pulsed)

300

A

V

SD

Forward On Voltage

1.5

V

I

SD = 75 A, VGS = 0

t

rr

Reverse Recovery Time

120

nS

I

SD = 75 A, di/dt = 100 A/µs

V

R = 20 V

Q

rr

Reverse Recovery Charge

0.45

µC

I

RRM

Reverse Recovery Current

6.5

A

*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.

D.U.T.

R

L

2200

µF

3.3

µF

V

DD

V

D

R

S

V

DS

F

W

AA

A

B

D

S

G

D

S

L = 100µH

D.U.T.

85

3.3

µF

1000

µF

V

DS

R

C

+

–

MOS

Diode

FAST

Diode

25

B

–

TEST CIRCUIT FOR INDUCTIVE LOAD SWITCHING

AND DIODE REVERSE RECOVERY TIME

SWITCHING TIMES TEST CIRCUITS

FOR RESISTIVE LOAD

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