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OM6025SC Datasheet(PDF) 3 Page - International Rectifier |
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OM6025SC Datasheet(HTML) 3 Page - International Rectifier |
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3 / 4 page  3.1 - 99 OM6025SC - OM6032SC 3.1 ELECTRICAL CHARACTERISTICS: OM6025SC, OM6032SC (TC = 25° unless otherwise noted) Characteristic Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) V(BR)DSS 400 - - Vdc Zero Gate Voltage Drain IDSS mAdc (VDS = 400 V, VGS = 0) - - 0.25 (VDS = 400 V, VGS = 0, TJ = 125° C) - - 1.0 Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc ON CHARACTERISTICS * Gate-Threshold Voltage VGS(th) Vdc (VDS = VGS, ID = 0.25 mAdc 2.0 3.0 4.0 (TJ = 125° C) 1.5 - 3.5 Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc) rDS(on) - - 0.20 Ohm Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 24 A) - - 5.4 (ID = 12 A, TJ = 125° C) - - 5.4 Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc) gFS 14 - - mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, Ciss - 5600 - pF Output Capacitance f = 1.0 MHz) Coss -78- Transfer Capacitance Crss - 230 - SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) -70- ns Rise Time (VDD = 250 V, ID = 24 A, tr - 190 - Turn-Off Delay Time Rgen = 4.3 ohms) td(off) - 160 - Fall Time tf - 160 - Total Gate Charge (VDS = 400 V, ID = 24 A, Qg - 110 140 nC Gate-Source Charge VGS = 10 V) Qgs -20- Gate-Drain Charge Qgd -55- SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage VSD - 1.1 1.6 Vdc Forward Turn-On Time (IS = 24 A, d/dt = 100 A/µs) ton ** ns Reverse Recovery Time trr - 500 1000 ELECTRICAL CHARACTERISTICS: OM6026SC, OM6031SC (TC = 25° unless otherwise noted) Characteristic Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) V(BR)DSS 500 - - Vdc Zero Gate Voltage Drain IDSS mAdc (VDS = 500 V, VGS = 0) - - 0.25 (VDS = 500 V, VGS = 0, TJ = 125° C) - - 1.0 Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc ON CHARACTERISTICS * Gate-Threshold Voltage VGS(th) Vdc (VDS = VGS, ID = 0.25 mAdc 2.0 3.0 4.0 (TJ = 125° C) 1.5 - 3.5 Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc) rDS(on) - - 0.27 Ohm Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 22 A) - - 8.0 (ID = 11 A, TJ = 125° C) - - 8.0 Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc) gFS 13 - - mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, Ciss - 5600 - pF Output Capacitance f = 1.0 MHz) Coss - 680 - Transfer Capacitance Crss - 200 - SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) -70- ns Rise Time (VDD = 250 V, ID = 22 A, tr - 190 - Turn-Off Delay Time Rgen = 4.3 ohms) Td(off) - 160 - Fall Time tf - 160 - Total Gate Charge (VDS = 400 V, ID = 22 A, Qg - 115 140 nC Gate-Source Charge VGS = 10 V) Qgs -20- Gate-Drain Charge Qgd -60- SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage VSD - 1.1 1.6 Vdc Forward Turn-On Time (IS = 22 A, d/dt = 100 A/µs) ton ** ns Reverse Recovery Time trr - 500 1000 * Indicates Pulse Test = 300 µsec, Duty Cycle = 2% ** Limited by circuit inductance |
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Similar Description - OM6025SC |
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