NXP Semiconductors

PESD5V0R1BSF

Ultra low capacitance bidirectional ESD protection diode

PESD5V0R1BSF

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Product data sheet

7 May 2015

3 / 12

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

rated peak pulse current

[1]

-

4.5

A

junction temperature

-

150

°C

ambient temperature

-40

125

°C

storage temperature

-65

150

°C

ESD maximum ratings

IEC 61000-4-2; contact discharge

[2]

-

10

kV

electrostatic discharge voltage

IEC 61000-4-2; air discharge

[2]

-

15

kV

[1] According to IEC 61000-4-5 and IEC 61643-321.

[2] Device stressed with ten non-repetitive ESD pulses.

t (µs)

0

40

30

10

20

001aaa630

40

80

120

(%)

0

Fig. 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 and IEC 61643-321

001aaa631

100 %

90 %

t

30 ns

60 ns

10 %

Fig. 2. ESD pulse waveform according to

IEC 61000-4-2