PMCM440VNE

12 V, N-channel Trench MOSFET

7 April 2015

Product data sheet

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1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level

Chip-Size Package (WLCSP) using Trench MOSFET technology.

2. Features and benefits

3. Applications

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

12

V

gate-source voltage

-8

-

8

V

drain current

[1]

-

-

5

A

Static characteristics

drain-source on-state

resistance

-

57

67

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for