NXP Semiconductors

PMCM650VNE

12 V, N-channel Trench MOSFET

PMCM650VNE

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Product data sheet

7 April 2015

7 / 15

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Source-drain diode

source-drain voltage

-

0.7

1.2

V

0

4

3

1

2

aaa-017443

8

12

4

16

20

(A)

0

1.1 V

1.2 V

1.3 V

1.4 V

1.8 V

2.5 V

4.5 V

Fig. 7. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-017444

(A)

0

1.0

0.8

0.4

0.6

0.2

(1)

(3)

(2)

(1) minimum values

(2) typical values

(3) maximum values

Fig. 8. Sub-threshold drain current as a function of

gate-source voltage

0

20

16

8

12

4

aaa-017445

40

20

60

80

0

1.2 V

1.3 V

1.4 V

1.8 V

2.5 V

Fig. 9. Drain-source on-state resistance as a function

of drain current; typical values

0

5

4

2

3

1

aaa-017446

20

40

60

0

Fig. 10. Drain-source on-state resistance as a function

of gate-source voltage; typical values