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PMCM4401VNE Datasheet(PDF) 4 Page - NXP Semiconductors |
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PMCM4401VNE Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 15 page NXP Semiconductors PMCM4401VNE 12V, N-channel Trench MOSFET PMCM4401VNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 24 July 2015 4 / 15 Tj (°C) - 75 175 125 25 75 - 25 017aaa123 40 80 120 Pder (%) 0 Fig. 2. Normalized total power dissipation as a function of junction temperature Tj (°C) - 75 175 125 25 75 - 25 017aaa124 40 80 120 Ider (%) 0 Fig. 3. Normalized continuous drain current as a function of junction temperature aaa-019061 1 10-1 10 102 ID (A) 10-2 VDS (V) 10-1 102 10 1 Limit RDSon = VDS/ID DC; Tsp = 25 °C DC; Tamb = 25 °C; drain mounting pad 6 cm2 tp = 10 µs tp = 100 µs tp = 1 ms tp = 10 ms tp = 100 ms IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - 250 300 K/W [2] - 70 85 K/W in free air [3] - 85 100 K/W Rth(j-a) thermal resistance from junction to ambient in free air; t ≤ 5 s [3] - 50 60 K/W |
Similar Part No. - PMCM4401VNE_15 |
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Similar Description - PMCM4401VNE_15 |
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