NXP Semiconductors

PMCM4401VNE

12V, N-channel Trench MOSFET

PMCM4401VNE

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Product data sheet

24 July 2015

4 / 15

- 75

175

125

25

75

- 25

017aaa123

40

80

120

(%)

0

Fig. 2. Normalized total power dissipation as a

function of junction temperature

- 75

175

125

25

75

- 25

017aaa124

40

80

120

(%)

0

Fig. 3. Normalized continuous drain current as a

function of junction temperature

aaa-019061

1

10

(A)

10

1

Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

250

300

K/W

[2]

-

70

85

K/W

in free air

[3]

-

85

100

K/W

thermal resistance

from junction to

ambient

in free air; t ≤ 5 s

[3]

-

50

60

K/W