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BF998 Datasheet(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF998 Datasheet(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 12 page 1996 Aug 01 4 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R THERMAL CHARACTERISTICS Notes 1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. 2. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj =25 °C; unless otherwise specified. Note 1. Measured under pulse condition. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VDS =8V; VG2-S = 4 V; ID = 10 mA. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air; BF998 note 1 460 K/W note 2 500 K/W Rth j-a thermal resistance from junction to ambient in free air; BF998R note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±V (BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-SS = ±10 mA 6 20 V ±V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-SS = ±10 mA 6 20 V −V(P)G1-S gate 1-source cut-off voltage VG2-S =4V; VDS =8V; ID =20 µA − 2.0 V −V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS =8V; ID =20 µA − 1.5 V IDSS drain-source current VG2-S =4V; VDS =8V; VG1-S = 0; note 1 2 18 mA ±IG1-SS gate 1 cut-off current VG2-S =VDS = 0; VG1-S = ±5V − 50 nA ±IG2-SS gate 2 cut-off current VG1-S =VDS = 0; VG2-S = ±5V − 50 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance f = 1 kHz 21 24 − mS Cig1-s input capacitance at gate 1 f = 1 MHz − 2.1 2.5 pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1.2 − pF Cos output capacitance f = 1 MHz − 1.05 − pF Crs reverse transfer capacitance f = 1 MHz − 25 − fF F noise figure f = 200 MHz; GS = 2 mS; BS =BSopt − 0.6 − dB f = 800 MHz; GS = 3.3 mS; BS =BSopt − 1.0 − dB |
Similar Part No. - BF998_15 |
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Similar Description - BF998_15 |
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