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CHR3894-QEG Datasheet(PDF) 3 Page - United Monolithic Semiconductors |
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CHR3894-QEG Datasheet(HTML) 3 Page - United Monolithic Semiconductors |
3 / 14 page 37-40GHz Integrated Down Converter CHR3894-QEG Ref. : DSCHR3894-QEG2201 -19 jul 12 3/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit VD, VD1 Drain bias voltages 4.5V V IDt Drain bias current 340 mA VGL, VGX Gate bias voltages -2 to +0.4 V GC Gain Control voltage -2.5 to +0.8 V P_RF Maximum peak input power overdrive (2) +15 dBm P_LO Maximum LO input power +15 dBm Tj Junction temperature (2) 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Typical Bias Conditions Tamb.= +25°C Symbol Pad N o Parameter Values Unit VD1, VD 10, 11 DC drain voltages (LNA and LO-chain) 4 V ID1 10 LNA drain current controlled with VGL 125 mA VGL 9 LNA DC gate voltage -0.1 V VGX 12 Multiplier DC gate voltage -0.9 V GC 8 Gain control DC voltage -2 to 0.6 V |
Similar Part No. - CHR3894-QEG_15 |
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Similar Description - CHR3894-QEG_15 |
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