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BFG480W Datasheet(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG480W Datasheet(HTML) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
6 / 16 page 1998 Jul 09 6 Philips Semiconductors Preliminary specification NPN wideband transistor BFG480W VCE = 2 V; f = 2 GHz. Fig.7 Gain as a function of collector current; typical values. 0 4 8 12 16 20 040 80 120 160 IC (mA) gain (dB) Gmax S21 IC = 80 mA; VCE =2V. Fig.8 Gain as a function of frequency; typical values. 0 10 20 30 40 50 10 100 1000 10000 f (MHz) gain (dB) MSG S21 Gmax |
Similar Part No. - BFG480W_15 |
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Similar Description - BFG480W_15 |
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