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BFG520XR Datasheet(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG520XR Datasheet(HTML) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
7 / 13 page September 1995 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR Fig.11 Intermodulation distortion as a function of collector current. handbook, halfpage 050 −20 −70 −60 −50 −40 −30 10 20 30 dim (dB) IC (mA) 40 MEA975 Fig.12 Second order intermodulation distortion as a function of collector current. handbook, halfpage 050 −20 −70 −60 −50 −40 −30 10 20 30 d2 (dB) IC (mA) 40 MEA974 Fig.13 Minimum noise figure and associated available gain as functions of collector current. V CE = 6 V; Tamb =25 °C. handbook, halfpage 5 0 1 2 5 0 −5 10 Gass (dB) 15 20 3 Fmin (dB) IC (mA) 4 MRA682 1 102 10 2000 MHz 1000 MHz 2000 MHz 1000 MHz f = 900 MHz Gass Fmin 900 MHz 500 MHz Fig.14 Minimum noise figure and associated available gain as functions of frequency. VCE = 6 V; Tamb =25 °C. handbook, halfpage 5 0 1 2 5 0 −5 10 Gass (dB) 15 20 3 Fmin (dB) f (MHz) 4 MRA683 102 104 103 Gass 5 mA Fmin 20 mA 20 mA IC = 5 mA |
Similar Part No. - BFG520XR_15 |
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Similar Description - BFG520XR_15 |
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