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BFG591 Datasheet(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG591 Datasheet(HTML) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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7 / 12 page  1995 Sep 04 7 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 Fig.9 Intermodulation distortion as a function of collector current; typical values. VCE = 12 V; Vo = 700 mV; f(p+q-r) = 793.25 MHz. handbook, halfpage 040 80 I C (mA) 120 −20 dim (dB) −70 −30 MGC797 −40 −50 −60 Fig.10 Second order Intermodulation distortion as a function of collector current; typical values. VCE = 12 V; Vo = 316 mV; f(p+q) = 810 MHz. handbook, halfpage 040 80 I C (mA) 120 −20 d2 (dB) −70 −30 MGC798 −40 −50 −60 |
Similar Part No. - BFG591_15 |
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Similar Description - BFG591_15 |
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