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IDM05G120C5 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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IDM05G120C5 Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 10 page Final Data Sheet 5 Rev. 2.0, 2015-08-28 5 th Generation thinQ!™ 1200 V SiC Schottky Diode IDM05G120C5 Electrical Characteristics Static Characteristic, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. DC blocking voltage VDC Tj = 25°C 1200 - - V Diode forward voltage VF IF= 5 A, Tj=25°C IF= 5 A, Tj=150°C - - 1.50 1.95 1.8 2.6 V Reverse current IR VR=1200 V, Tj=25°C VR=1200 V, Tj=150°C 2.5 12 33 175 µA Dynamic Characteristics, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. Total capacitive charge QC VR = 800 V, Tj=150°C R V C dV V C Q 0 ) ( - 24 - nC Total Capacitance C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz - - - 301 21 17 - - - pF Electrical Characteristics diagram |
Similar Part No. - IDM05G120C5_15 |
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Similar Description - IDM05G120C5_15 |
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