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IKW40N65ES5 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IKW40N65ES5
Description  high Speed soft switching IGBT with full current rated RAPID 1 diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW40N65ES5 Datasheet(HTML) 6 Page - Infineon Technologies AG

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IKW40N65ES5
TRENCHSTOPTM5softswitchingIGBT
Rev.2.1,2015-09-22
Turn-on delay time
td(on)
-
18
-
ns
Rise time
tr
-
7
-
ns
Turn-off delay time
td(off)
-
143
-
ns
Fall time
tf
-
24
-
ns
Turn-on energy
Eon
-
0.39
-
mJ
Turn-off energy
Eoff
-
0.21
-
mJ
Total switching energy
Ets
-
0.60
-
mJ
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=10.0
Ω,RG(off)=10.0Ω,
L
σ=30nH,Cσ=30pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
-
73
-
ns
Diode reverse recovery charge
Qrr
-
1.10
-
µC
Diode peak reverse recovery current
Irrm
-
23.0
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-1500
-
A/µs
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=820A/µs
Diode reverse recovery time
trr
-
58
-
ns
Diode reverse recovery charge
Qrr
-
0.80
-
µC
Diode peak reverse recovery current
Irrm
-
22.0
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-1740
-
A/µs
Tvj=25°C,
VR=400V,
IF=20.0A,
diF/dt=750A/µs
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
-
20
-
ns
Rise time
tr
-
16
-
ns
Turn-off delay time
td(off)
-
156
-
ns
Fall time
tf
-
48
-
ns
Turn-on energy
Eon
-
1.20
-
mJ
Turn-off energy
Eoff
-
0.69
-
mJ
Total switching energy
Ets
-
1.89
-
mJ
Tvj=150°C,
VCC=400V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=10.0
Ω,RG(off)=10.0Ω,
L
σ=30nH,Cσ=30pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time
td(on)
-
18
-
ns
Rise time
tr
-
8
-
ns
Turn-off delay time
td(off)
-
184
-
ns
Fall time
tf
-
48
-
ns
Turn-on energy
Eon
-
0.60
-
mJ
Turn-off energy
Eoff
-
0.39
-
mJ
Total switching energy
Ets
-
0.99
-
mJ
Tvj=150°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=10.0
Ω,RG(off)=10.0Ω,
L
σ=30nH,Cσ=30pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.


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