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BUK9Y113-100E Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9Y113-100E Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page NXP Semiconductors BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 BUK9Y113-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 8 May 2013 6 / 13 Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance - 652 870 pF Coss output capacitance - 69 83 pF Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; Fig. 15 - 52 71 pF td(on) turn-on delay time - 6.2 - ns tr rise time - 10.8 - ns td(off) turn-off delay time - 12.4 - ns tf fall time VDS = 80 V; RL = 10 Ω; VGS = 5 V; RG(ext) = 5 Ω; Tj = 25 °C - 9.3 - ns Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.89 1.2 V trr reverse recovery time - 28 - ns Qr recovered charge IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C - 29 - nC 003aai854 0 4 8 12 16 20 0 1 2 3 4 VDS(V) ID (A) VGS(V) = 10 2.6 2.8 3.5 2.4 3 2.2 Tj = 25 °C; tp = 300 μs Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values 003aai857 0 5 10 15 20 0 1 2 3 4 VGS (V) ID (A) Tj = 25 °C Tj = 175 °C Fig. 7. Transfer characteristics; drain current as a function of gate-source voltage; typical values |
Similar Part No. - BUK9Y113-100E_15 |
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Similar Description - BUK9Y113-100E_15 |
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