NXP Semiconductors

PMC85XP

30 V P-channel MOSFET with pre-biased NPN transistor

PMC85XP

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Product data sheet

15 May 2013

4 / 15

- 75

175

125

25

75

- 25

017aaa123

40

80

120

(%)

0

Fig. 1. Normalized total power dissipation as a

function of junction temperature

- 75

175

125

25

75

- 25

017aaa124

40

80

120

(%)

0

Fig. 2. Normalized continuous drain current as a

function of junction temperature

aaa-003661

-10

-1

-1

-10

(A)

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

P-channel Trench MOSFET

[1]

-

223

256

K/W

in free air

[2]

-

93

107

K/W

thermal resistance

from junction to

ambient

t ≤ 5 s; in free air

[2]

-

55

63

K/W