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BUK7Y38-100E Datasheet(PDF) 6 Page - NXP Semiconductors

Part # BUK7Y38-100E
Description  N-channel 100 V, 38 m廓 standard level MOSFET in LFPAK56
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7Y38-100E Datasheet(HTML) 6 Page - NXP Semiconductors

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NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
BUK7Y38-100E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
8 May 2013
6 / 13
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ciss
input capacitance
-
1293
1720
pF
Coss
output capacitance
-
145
174
pF
Crss
reverse transfer
capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
-
109
149
pF
td(on)
turn-on delay time
-
6.6
-
ns
tr
rise time
-
9.9
-
ns
td(off)
turn-off delay time
-
22
-
ns
tf
fall time
VDS = 80 V; RL = 10 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
12.6
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
0.79
1.2
V
trr
reverse recovery time
-
34.2
-
ns
Qr
recovered charge
IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V
-
45.5
-
nC
003aai569
0
1.5
3
4.5
6
0
16
32
48
64
80
VDS (V)
ID
ID
(A)
(A)
VGS = 4 V
VGS = 4 V
4.5 V
4.5 V
5 V
5 V
5.5 V
5.5 V
6 V
6 V
10 V
10 V
Tj = 25 °C; tp = 300 μs
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
003aai570
0
4
8
12
16
20
0
20
40
60
80
100
VGS (V)
RDSon
RDSon
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values


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