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BUK7Y38-100E Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK7Y38-100E Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page NXP Semiconductors BUK7Y38-100E N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56 BUK7Y38-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 8 May 2013 6 / 13 Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance - 1293 1720 pF Coss output capacitance - 145 174 pF Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; Fig. 15 - 109 149 pF td(on) turn-on delay time - 6.6 - ns tr rise time - 9.9 - ns td(off) turn-off delay time - 22 - ns tf fall time VDS = 80 V; RL = 10 Ω; VGS = 10 V; RG(ext) = 5 Ω; Tj = 25 °C - 12.6 - ns Source-drain diode VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.79 1.2 V trr reverse recovery time - 34.2 - ns Qr recovered charge IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V - 45.5 - nC 003aai569 0 1.5 3 4.5 6 0 16 32 48 64 80 VDS (V) ID ID (A) (A) VGS = 4 V VGS = 4 V 4.5 V 4.5 V 5 V 5 V 5.5 V 5.5 V 6 V 6 V 10 V 10 V Tj = 25 °C; tp = 300 μs Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values 003aai570 0 4 8 12 16 20 0 20 40 60 80 100 VGS (V) RDSon RDSon Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values |
Similar Part No. - BUK7Y38-100E_15 |
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Similar Description - BUK7Y38-100E_15 |
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