BUK9K45-100E_15 datasheet(1/13 Pages) PHILIPS

Part #	BUK9K45-100E

Description	Dual N-channel TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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BUK9K45-100E

Dual N-channel TrenchMOS logic level FET

26 March 2013

Product data sheet

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1. General description

Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Features and benefits

• Q101 compliant

• Repetitive avalanche rated

• Suitable for thermally demanding environments due to 175 °C rating

• True logic level gate with VGS(th) > 0.5 V @ 175 °C

3. Applications

• 12 V Automotive systems

• Motors, lamps and solenoid control

• Start-stop micro-hybrid applications

• Transmission control

• Ultra high performance power switching

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

100

V

ID

drain current

VGS = 5 V; Tmb = 25 °C; Fig. 1

-

21

A

Ptot

total power dissipation Tmb = 25 °C; Fig. 2

-

53

W

Static characteristics FET1 and FET2

RDSon

drain-source on-state

resistance

VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12

-

38.3

45

mΩ

Dynamic characteristics FET1 and FET2

QGD

gate-drain charge

ID = 5 A; VDS = 80 V; VGS = 10 V;

Tj = 25 °C; Fig. 15; Fig. 14

-

7.3

-

nC

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