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BUK9Y4R8-60E Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BUK9Y4R8-60E
Description  N-channel 60 V, 4.8 m廓 logic level MOSFET in LFPAK56
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
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NXP Semiconductors
BUK9Y4R8-60E
N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56
BUK9Y4R8-60E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
8 May 2013
5 / 13
003aai463
10-6
10-5
10-4
10-3
10-2
10-1
1
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
Zth(j-mb)
(K/W)
(K/W)
P
t
tp
T
tp
δ = T
single shot
single shot
δ = 0.5
δ = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
54
-
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 9; Fig. 10
1.4
1.7
2.1
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
-
-
2.45
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
0.5
-
-
V
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
0.12
10
µA
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
IGSS
gate leakage current
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
-
3.3
4.8
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
-
2.9
4.1
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A; Tj = 175 °C;
Fig. 11; Fig. 12
-
-
10.8
Dynamic characteristics
QG(tot)
total gate charge
-
50
-
nC
QGS
gate-source charge
ID = 25 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
13.6
-
nC


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