NXP Semiconductors

BUK9Y7R6-40E

N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56

BUK9Y7R6-40E

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Product data sheet

7 May 2013

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

gate-drain charge

-

5.5

-

nC

input capacitance

-

1807

2403

pF

output capacitance

-

260

312

pF

reverse transfer

capacitance

-

126

173

pF

turn-on delay time

-

11.3

-

ns

rise time

-

20.9

-

ns

turn-off delay time

-

22.7

-

ns

fall time

-

16.6

-

ns

Source-drain diode

source-drain voltage

-

0.84

1.2

V

reverse recovery time

-

17

-

ns

recovered charge

-

8.1

-

nC

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0

0.5

1

1.5

2

2.5

3

0

50

100

150

200

250

(A)

(A)

2.4 V

2.4 V

2.8 V

2.8 V

3.5 V

3.5 V

4.5 V

4.5 V

10 V

10 V

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

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0

2

4

6

8

10

12

14

16

0

5

10

15

20

25

30

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values