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BUK9Y7R6-40E Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9Y7R6-40E Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page NXP Semiconductors BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 7 May 2013 6 / 13 Symbol Parameter Conditions Min Typ Max Unit QGD gate-drain charge - 5.5 - nC Ciss input capacitance - 1807 2403 pF Coss output capacitance - 260 312 pF Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; Fig. 15 - 126 173 pF td(on) turn-on delay time - 11.3 - ns tr rise time - 20.9 - ns td(off) turn-off delay time - 22.7 - ns tf fall time VDS = 30 V; RL = 1.5 Ω; VGS = 5 V; RG(ext) = 5 Ω; Tj = 25 °C - 16.6 - ns Source-drain diode VSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.84 1.2 V trr reverse recovery time - 17 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C - 8.1 - nC 003aaj234 0 0.5 1 1.5 2 2.5 3 0 50 100 150 200 250 VDS (V) ID ID (A) (A) 2.4 V 2.4 V 2.8 V 2.8 V VGS = 3 V VGS = 3 V 3.5 V 3.5 V 4.5 V 4.5 V 10 V 10 V Tj = 25 °C; tp = 300 μs Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values 003aaj235 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 VGS (V) RDSon RDSon Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values |
Similar Part No. - BUK9Y7R6-40E_15 |
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Similar Description - BUK9Y7R6-40E_15 |
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