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IDM08G120C5 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # IDM08G120C5
Description  Silicon Carbide Schottky Diode
Download  10 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IDM08G120C5 Datasheet(HTML) 2 Page - Infineon Technologies AG

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1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2015-07-22
5
th Generation thinQ!™ 1200 V SiC Schottky Diode
IDM08G120C5
SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC
1) for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Related Links: www.infineon.com/sic
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
Pin 1 and backside
– cathode
Pin 2
– anode
Key Performance and Package Parameters
Type
VDC
IF
QC
Tj,max
Marking
Package
IDM08G120C5
1200V
8A
28nC
175°C
D0812C5
PG-TO252-2
1
2


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