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BUK765R3-40E Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK765R3-40E Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors BUK765R3-40E N-channel TrenchMOS standard level FET BUK765R3-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 13 July 2012 7 / 13 003aah157 0 60 120 180 240 0 2 4 6 8 VGS(V) ID (A) Tj = 25 °C Tj = 175 °C Fig. 8. Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah028 10-6 10-5 10-4 10-3 10-2 10-1 0 2 4 6 VGS(V) ID (A) max typ min Fig. 9. Sub-threshold drain current as a function of gate-source voltage 003aah027 0 1 2 3 4 5 -60 0 60 120 180 Tj (°C) VGS(th) (V) max typ min Fig. 10. Gate-source threshold voltage as a function of junction temperature 003aah160 0 4 8 12 16 0 50 100 150 200 250 ID(A) RDSon (mΩ) 8 VGS(V) = 20 10 6 5.5 5 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values |
Similar Part No. - BUK765R3-40E_15 |
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Similar Description - BUK765R3-40E_15 |
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