MMBTA42 datasheet(1/2 Pages) MCC

Part #	MMBTA42

Description	NPN Silicon High Voltage Transistor

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Manufacturer	MCC [Micro Commercial Components]

Direct Link	http://www.mccsemi.com

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MMBTA42

NPN Silicon High

Voltage Transistor

SOT-23

Suggested Solder

Pad Layout

Features

•

Surface Mount SOT-23 Package

•

Capable of 300mWatts of Power Dissipation

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.110

.120

2.80

3.04

B

.083

.098

2.10

2.64

C

.047

.055

1.20

1.40

D

.035

.041

.89

1.03

E

.070

.081

1.78

2.05

F

.018

.024

.45

.60

G

.0005

.0039

.013

.100

H

.035

.044

.89

1.12

J

.003

.007

.085

.180

K

.015

.020

.37

.51

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

(IC=1.0mAdc, IB=0)

300

Vdc

V(BR)CBO

Collector-Base Breakdown Voltage

(IC=100

µAdc, I

E=0)

300

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(IE=100

µAdc, I

C=0)

6.0

Vdc

ICBO

Collector Cutoff Current

(VCB=200Vdc, IE=0)

0.1

uAdc

IEBO

Emitter Cutoff Current

(VEB=6.0Vdc, IC=0)

0.1

uAdc

ON CHARACTERISTICS

hFE

DC Current Gain*

(IC=1.0mAdc, VCE=10Vdc)

(IC=10mAdc, VCE=10Vdc)

(IC=30mAdc, VCE=10Vdc)

25

40

----

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=20mAdc, IB=2.0mAdc)

0.5

Vdc

VBE(sat)

Base-Emitter Saturation Voltage

(IC=20mAdc, IB=2.0mAdc)

0.9

Vdc

SMALL-SIGNAL CHARACTERISTICS

fT

Current Gain-Bandwidth Product

(IC=10mAdc, VCE=20Vdc, f=100MHz)

50

MHz

Ccb

Collector-Emitter Capacitance

(VCB=20Vdec, IE=0, f=1.0MHz)

3.0

pF

*Pulse Width

≤ 300µs, Duty Cycle ≤ 2.0%

.079

2.000

inches

mm

.031

.800

.035

.900

.037

.950

.037

.950

1 D

C

B

E

Pin Configuration

Top View

K

A

B

C

D

E

F

G

H

J

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board,(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

–55 to +150

°C

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