BUK962R6-40E_15 datasheet(5/13 Pages) PHILIPS

Part #	BUK962R6-40E

Description	N-channel TrenchMOS logic level FET

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NXP Semiconductors

BUK962R6-40E

N-channel TrenchMOS logic level FET

BUK962R6-40E

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Product data sheet

13 July 2012

5 / 13

003aah303

single shot

0.2

0.1

0.05

10-3

10-2

10-1

1

10-6

10-5

10-4

10-3

10-2

10-1

1

tp (s)

Zth(j-mb)

(K/W)

δ = 0.5

0.02

tp

T

P

t

tp

T

δ =

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

7. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C

40

-

V

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = -55 °C

36

-

V

ID = 1 mA; VDS = VGS; Tj = 25 °C;

Fig. 9; Fig. 10

1.4

1.7

2.1

V

ID = 1 mA; VDS = VGS; Tj = -55 °C;

Fig. 9

-

2.45

V

VGS(th)

gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = 175 °C;

Fig. 9

0.5

-

V

VDS = 40 V; VGS = 0 V; Tj = 25 °C

-

0.14

1

µA

IDSS

drain leakage current

VDS = 40 V; VGS = 0 V; Tj = 175 °C

-

500

µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

IGSS

gate leakage current

VGS = -10 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11

-

2.35

2.8

mΩ

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 11

-

2

2.4

mΩ

RDSon

drain-source on-state

resistance

VGS = 5 V; ID = 25 A; Tj = 175 °C;

Fig. 12; Fig. 11

-

5.4

mΩ

Dynamic characteristics

QG(tot)

total gate charge

-

80.6

-

nC

QGS

gate-source charge

ID = 25 A; VDS = 32 V; VGS = 5 V;

Fig. 13; Fig. 14

-

18.8

-

nC

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