NXP Semiconductors

BUK969R0-60E

N-channel TrenchMOS logic level FET

BUK969R0-60E

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Product data sheet

13 July 2012

6 / 12

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Source-drain diode

source-drain voltage

-

0.83

1.2

V

reverse recovery time

-

27

-

ns

recovered charge

-

28

-

nC

003aah949

0

60

120

180

0

1

2

3

(A)

2.6

2.8

3.5

4.5

2.4

3

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

003aah950

5

10

15

20

0

2.5

5

7.5

10

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aah952

0

40

80

120

160

0

1

2

3

4

5

(A)

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah025

0

0.5

1

1.5

2

2.5

3

-60

0

60

120

180

(V)

max

typ

min

Fig. 9. Gate-source threshold voltage as a function of

junction temperature