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BUK969R3-100E Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK969R3-100E Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page NXP Semiconductors BUK969R3-100E N-channel TrenchMOS logic level FET BUK969R3-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 5 October 2012 3 / 13 Symbol Parameter Conditions Min Max Unit Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 100 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 405 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 3 [3][4] - 219 mJ [1] Accumulated pulse duration up to 50 hours delivers zero defect ppm [2] Significantly longer life times are achieved by lowering Tj and or VGS [3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [4] Refer to application note AN10273 for further information. 003aah960 0 40 80 120 0 50 100 150 200 Tmb(°C) ID (A) Fig. 1. Continuous drain current as a function of mounting base temperature Tmb (°C) 0 200 150 50 100 03aa16 40 80 120 Pder (%) 0 Fig. 2. Normalized total power dissipation as a function of mounting base temperature |
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