1

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FN9205.4

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

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Copyright Intersil Americas Inc. 2005-2006, 2012. All Rights Reserved

All other trademarks mentioned are the property of their respective owners.

ISL6612B, ISL6613B

Advanced Synchronous Rectified Buck

MOSFET Drivers with Pre-POR OVP

The ISL6612B and ISL6613B are high frequency MOSFET

drivers specifically designed to drive upper and lower power

N-Channel MOSFETs in a synchronous rectified buck

converter topology. These drivers combined with HIP63xx or

ISL65xx Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

The ISL6612B drives the upper gate to above rising VCC

POR (7V), while the lower gate can be independently driven

over a range from 5V to 12V. The ISL6613B drives both

upper and lower gates over a range of 5V to 12V. This drive-

voltage provides the flexibility necessary to optimize

applications involving trade-offs between gate charge and

conduction losses. These drivers are optimized for POL

DC/DC Converters for IBA Systems.

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize the dead

time. These products add an overvoltage protection feature

operational before VCC exceeds its turn-on threshold, at

which the PHASE node is connected to the gate of the low

side MOSFET (LGATE). The output voltage of the converter

is then limited by the threshold of the low side MOSFET,

which provides some protection to the microprocessor if the

upper MOSFET(s) is shorted during initial start-up.

These drivers also feature a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

Features

• Pin-to-pin Compatible with HIP6601 SOIC family

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Low VCC Rising Threshold (7V) for IBA Applications.

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (up to 2MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications With

Power Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free (RoHS Compliant)

Applications

• Optimized for POL DC/DC Converters for IBA Systems

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

Related Literature

• Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

• Technical Brief TB417 for Power Train Design, Layout

Guidelines, and Feedback Compensation Design

Data Sheet

May 1, 2012

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