PMCPB5530X

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 1 — 26 June 2012

2 of 18

NXP Semiconductors

PMCPB5530X

20 V, complementary Trench MOSFET

[1]

2.

Pinning information

3.

Ordering information

4.

Marking

5.

Limiting values

TR2 (P-channel)

drain-source voltage

---20

V

gate-source voltage

-12

-

12

V

drain current

[1]

---4.5

A

Table 1.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1S1

source TR1

DFN2020-6 (SOT1118)

2

G1

gate TR1

3D2

drain TR2

4S2

source TR2

5

G2

gate TR2

6D1

drain TR1

7D1

drain TR1

8D2

drain TR2

Transparent top view

6

78

54

123

S1

D1

G1

S2

017aaa261

D2

G2

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PMCPB5530X

DFN2020-6

plastic thermal enhanced ultra thin small outline package;

no leads; 6 terminals

SOT1118

Table 4.

Marking codes

Type number

Marking code

PMCPB5530X

1W

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1 (N-channel)

drain-source voltage

-

20

V

gate-source voltage

-12

12

V