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BUK9212-55B Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK9212-55B Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 13 page BUK9212-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 — 3 February 2011 5 of 13 NXP Semiconductors BUK9212-55B N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj = 25 °C 55 --V ID =0.25mA; VGS =0V; Tj = -55 °C 50 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 10 1.1 1.5 2 V ID =1mA; VDS =VGS; Tj = 185 °C; see Figure 10 0.4 --V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10 --2.3 V IDSS drain leakage current VDS =55V; VGS =0V; Tj = 185 °C - - 500 µA VDS =55V; VGS =0V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VGS =15V; VDS =0V; Tj = 25 °C - 2 100 nA VGS =-15 V; VDS =0V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =5V; ID =25A; Tj = 185 °C; see Figure 11; see Figure 12 --25 m Ω VGS =4.5 V; ID =25A; Tj = 25 °C --13 m Ω VGS =5V; ID =25A; Tj =25 °C; see Figure 12; see Figure 11 - 10.2 12 m Ω VGS =10V; ID =25A; Tj =25°C - 8.1 10 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =44V; VGS =5V; Tj =25°C; see Figure 13 -32 -nC QGS gate-source charge - 6 - nC QGD gate-drain charge - 13 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 14 - 2640 3519 pF Coss output capacitance - 360 431 pF Crss reverse transfer capacitance - 160 220 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V; RG(ext) =10 Ω; Tj =25 °C -19 -ns tr rise time - 101 - ns td(off) turn-off delay time VDS 30 V; RL =1.2 Ω; VGS =5 V; RG(ext) =10 Ω; Tj =25 °C -96 -ns tf fall time VDS =30V; RL =1.2 Ω; VGS =5V; RG(ext) =10 Ω; Tj =25 °C -75 -ns LD internal drain inductance measured from drain to center of die ; Tj =25°C -2.5 -nH LS internal source inductance measured from source lead to source bond pad ; Tj =25°C -7.5 -nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C; see Figure 15 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =30 V; Tj =25°C -55 -ns Qr recovered charge - 53 - nC |
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