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BUK9217-75B Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9217-75B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page BUK9217-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 3 February 2011 6 of 16 NXP Semiconductors BUK9217-75B N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj = 25 °C 75 --V ID =0.25mA; VGS =0V; Tj = -55 °C 70 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 9 1.1 1.5 2 V ID =1mA; VDS =VGS; Tj = 185 °C; see Figure 9 0.4 --V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 9 --2.3 V IDSS drain leakage current VDS =75V; VGS =0V; Tj = 185 °C - - 500 µA VDS =75V; VGS =0V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VGS =15V; VDS =0V; Tj = 25 °C - 2 100 nA VGS =-15 V; VDS =0V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =4.5 V; ID =25A; Tj = 25 °C --19 m Ω VGS =5V; ID =25A; Tj = 185 °C; see Figure 10; see Figure 11 --40 m Ω VGS =10V; ID =25A; Tj = 25 °C - 13.4 15 m Ω VGS =5V; ID =25A; Tj =25 °C; see Figure 10; see Figure 11 - 14.4 17 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =60V; VGS =5V; Tj =25°C; see Figure 12 -35 - nC QGS gate-source charge - 6 - nC QGD gate-drain charge - 14 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 15 - 3022 4029 pF Coss output capacitance - 290 348 pF Crss reverse transfer capacitance - 115 158 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V; RG(ext) =10 Ω; Tj =25 °C -30 - ns tr rise time - 102 - ns td(off) turn-off delay time - 101 - ns tf fall time - 58 - ns LD internal drain inductance measured from drain to center of die ; Tj =25°C -2.5 -nH LS internal source inductance measured from source lead to source lbond pad ; Tj =25 °C -7.5 -nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0 V; Tj =25°C; see Figure 13 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =30 V; Tj =25°C -96 - ns Qr recovered charge - 138 - nC |
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