BUK9511-55A_15 datasheet(2/13 Pages) PHILIPS

Part #	BUK9511-55A

Description	N-channel TrenchMOS logic level FET

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BUK9511-55A

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Product data sheet

Rev. 2 — 7 February 2011

2 of 13

NXP Semiconductors

BUK9511-55A

N-channel TrenchMOS logic level FET

2.

Pinning information

3.

Ordering information

Static characteristics

RDSon

drain-source

on-state

resistance

VGS =4.5 V; ID =25A;

Tj =25°C

--12

m

Ω

VGS =10V; ID =25A;

Tj =25°C

-8

10

m

Ω

VGS =5V; ID =25A;

Tj =25°C; see Figure 12;

see Figure 13

-9

11

m

Ω

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

ID =75A; Vsup ≤ 55 V;

RGS =50 Ω; VGS =5V;

Tj(init) = 25 °C; unclamped

--330

mJ

Table 1.

Quick reference data …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1

G

gate

SOT78A (TO-220AB)

2

D

drain

3S

source

mb

D

mounting base; connected to

drain

12

mb

3

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK9511-55A

TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78A

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