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BUK9609-75A Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK9609-75A Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page BUK9609-75A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 30 August 2011 8 of 13 NXP Semiconductors BUK9609-75A N-channel TrenchMOS logic level FET Fig 13. Drain-source on-state resistance as a function of drain current; typical values Fig 14. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 15. Reverse diode current as a function of reverse diode voltage; typical values 03nb42 5 10 15 20 0 50 100 150 200 250 300 350 ID (A) RDSon (m Ω) VGS (V) = 3 3.2 3.6 3.8 4 6 3.4 Tj (°C) −60 180 120 060 03nb25 0.8 1.6 2.4 a 0 03nb36 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) IS (A) Tj = 175 °C Tj = 25 °C |
Similar Part No. - BUK9609-75A_15 |
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Similar Description - BUK9609-75A_15 |
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