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TLV4961-3T Datasheet(PDF) 10 Page - Infineon Technologies AG |
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TLV4961-3T Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 19 page Data Sheet 10 Revision 1.0, 2015-05-18 TLV4961-3T Specification 3 Specification 3.1 Application Circuit The following Figure 7 shows the basic option of an application circuit. Only a pull-up resistor RQ is necessary. The resistor RQ has to be in a dimension to match the applied VS to keep IQ limited to the operating range of maximum 25 mA. e.g.: VS = 12 V; IQ = 12 V/1200 Ω = 10 mA Figure 7 Basic Application Circuit #1: Only Pull-Up Resistor is necessary Figure 8 Enhanced Application Circuit #2 for extended ESD robustness With an additional capacitor CDD and a transient voltage suppression (TVS) diode an extended ESD robustness on system level is achieved (Figure 8). GND Vs RQ = 1.2kΩ VDD Q GND Vs RQ = 1.2kΩ CDD = 47nF VDD Q TVS diode e.g. ESD24VS2U |
Similar Part No. - TLV4961-3T_15 |
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Similar Description - TLV4961-3T_15 |
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