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IKW30N65WR5 Datasheet(PDF) 10 Page - Infineon Technologies AG |
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IKW30N65WR5 Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 15 page 10 IKW30N65WR5 ReverseConductingSeries Rev.1.3,2015-06-01 Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=30A,dynamictestcircuitin Figure E) RG,GATERESISTANCE[ Ω] 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Eoff Eon Ets Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RG(on)=26 Ω,RG(off)=26Ω,dynamic test circuit in Figure E) Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Eoff Eon Ets Figure 15. Typicalgatecharge (IC=30A) QGE,GATECHARGE[nC] 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 VCC=130V VCC=520V Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 3 6 9 12 15 18 21 24 27 30 10 100 1000 1E+4 Cies Coes Cres |
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