IKW50N65EH5 datasheet(4/17 Pages) INFINEON

Part #	IKW50N65EH5

Description	650V DuoPack IGBT and full-rated diode High speed series fifth generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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4

IKW50N65EH5

Highspeedseriesfifthgeneration

Rev.2.1,2015-05-20

MaximumRatings

Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter

Symbol

Value

Unit

Collector-emittervoltage,Tvj

≥25°C

VCE

650

V

DCcollectorcurrent,limitedbyTvjmax

TC=25°Cvaluelimitedbybondwire

TC=100°C

IC

80.0

50.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax1)

ICpuls

200.0

A

Turn off safe operating area

VCE

≤650V,Tvj≤175°C,tp=1µs1)

-

200.0

A

Diodeforwardcurrent,limitedbyTvjmax

TC=25°Cvaluelimitedbybondwire

TC=100°C

IF

80.0

50.0

A

Diodepulsedcurrent,tplimitedbyTvjmax1)

IFpuls

200.0

A

Gate-emitter voltage

TransientGate-emittervoltage(tp

≤10µs,D<0.010)

VGE

±20

±30

V

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Ptot

275.0

138.0

W

Operating junction temperature

Tvj

-40...+175

°C

Storage temperature

Tstg

-55...+150

°C

Soldering temperature,

wave soldering 1.6mm (0.063in.) from case for 10s

260

°C

Mounting torque, M3 screw

Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,

junction - case

Rth(j-c)

0.55

K/W

Diode thermal resistance,

junction - case

Rth(j-c)

0.63

K/W

Thermal resistance

junction - ambient

Rth(j-a)

40

K/W

1) Defined by design. Not subject to production test.

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