IKW50N65EH5 datasheet(10/17 Pages) INFINEON

Part #	IKW50N65EH5

Description	650V DuoPack IGBT and full-rated diode High speed series fifth generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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10 / 17 page

10

IKW50N65EH5

Highspeedseriesfifthgeneration

Rev.2.1,2015-05-20

Figure 9.

Typicalswitchingtimesasafunctionofgate

resistance

(inductiveload,Tvj=150°C,VCE=400V,

VGE=0/15V,IC=50A,dynamictestcircuitin

Figure E)

RG,GATERESISTANCE[

Ω]

5

15

25

35

45

55

65

75

85

10

100

1000

td(off)

tf

td(on)

tr

Figure 10.

Typicalswitchingtimesasafunctionof

junctiontemperature

(inductiveload,VCE=400V,VGE=0/15V,

IC=50A,RG(on)=12

Ω,RG(off)=12Ω,dynamic

test circuit in Figure E)

Tvj,JUNCTIONTEMPERATURE[°C]

25

50

75

100

125

150

175

1

10

100

1000

td(off)

tf

td(on)

tr

Figure 11.

Gate-emitterthresholdvoltageasafunction

ofjunctiontemperature

(IC=0.5mA)

Tvj,JUNCTIONTEMPERATURE[°C]

25

50

75

100

125

150

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

typ.

min.

max.

Figure 12.

Typicalswitchingenergylossesasa

functionofcollectorcurrent

(inductiveload,Tvj=150°C,VCE=400V,

VGE=0/15V,RG(on)=12

Ω,RG(off)=12Ω,

dynamic test circuit in Figure E)

IC,COLLECTORCURRENT[A]

0

25

50

75

100

125

150

0

1

2

3

4

5

6

7

8

9

10

11

12

Eoff

Eon

Ets

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IKW50N65EH5 Datasheet(PDF) 10 Page - Infineon Technologies AG

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