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IKW75N65EH5 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IKW75N65EH5 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 17 page 2 IKW75N65EH5 Highspeedseriesfifthgeneration Rev.2.1,2015-05-20 Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-rated RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications: •Uninterruptiblepowersupplies •Solarconverters •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter G C E 1 2 3 KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IKW75N65EH5 650V 75A 1.65V 175°C K75EEH5 PG-TO247-3 |
Similar Part No. - IKW75N65EH5_15 |
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Similar Description - IKW75N65EH5_15 |
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