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TIP41CL-X-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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TIP41CL-X-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page TIP41C NPN PLANAR TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R203-008.I ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC 6 A Collector Current Pulse IC 10 A Base Current IB 2 A TO-220 65 TO-220F 22 TC=25C TO-252 25 W TO-220 2 TO-220F 0.7 Collector Dissipation TA=25C TO-252 PC 0.75 W Junction Temperature TJ 150 C Storage Temperature TSTG -65 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Emitter Base Breakdown Voltage BVEBO IE=100μA, IC=0 5 V Collector Base Breakdown Voltage BVCBO IE=100μA, IC=0 100 V Collector Emitter Sustaining Voltage (Note) VCEO IC=30mA, IB=0 100 V Collector Cutoff Current ICEO VCE=60V, IB=0 0.7 mA Collector Cutoff Current ICES VCE=100V, VEB=0 400 μA Emitter Cutoff Current IEBO VEB=5V, IC=0 1 mA Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=6A, IB=600mA 1.5 V Base-Emitter On Voltage (Note) VBE(ON) IC=6A, VCE=4V 2.0 V hFE1 IC=300mA, VCE=4V 30 DC Current Gain (Note) hFE2 IC=3A, VCE=4V 15 75 Current Gain Bandwidth Product fT VCE=10V, IC=500mA, f=1MHz 3 MHz Note: Pulse Test: PW≦300μs, Duty Cycle≦2% CLASSIFICATION OF hFE2 RANK A B C RANGE 15~30 28~48 45~75 |
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