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BUK7Y13-40B Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK7Y13-40B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page BUK7Y13-40B_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 26 May 2008 2 of 12 NXP Semiconductors BUK7Y13-40B N-channel TrenchMOS standard level FET 2. Pinning information 3. Ordering information 4. Limiting values [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information. Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1, 2, 3 S source SOT669 (LFPAK) 4 G gate mb D mounting base; connected to drain mb 1234 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version BUK7Y13-40B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C- 40 V VDGR drain-gate voltage RGS =20kΩ -40 V VGS gate-source voltage 20 20 V ID drain current Tmb =25 °C; VGS = 10 V; see Figure 1 and 4 -58 A Tmb = 175 °C; VGS = 10 V; see Figure 1 -41 A IDM peak drain current Tmb =25 °C; tp ≤ 10 μs; pulsed; see Figure 4 - 234 A Ptot total power dissipation Tmb =25 °C; see Figure 2 -85 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =58A; Vsup ≤ 40 V; RGS =50 Ω; VGS =10 V; Tj(init) =25 °C; unclamped -85 mJ EDS(AL)R repetitive drain-source avalanche energy see Figure 3 [1][2] [3] --J Source-drain diode IS source current Tmb =25 °C- 58 A ISM peak source current tp ≤ 10 μs; pulsed; Tmb =25 °C - 234 A |
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