BUK9C07-65BIT

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Product data sheet

Rev. 03 — 15 July 2010

8 of 16

NXP Semiconductors

BUK9C07-65BIT

N-channel TrenchPLUS logic level FET

Source-drain diode

source-drain voltage

see Figure 18

-

0.85

1.2

V

reverse recovery time

-

60.1

-

ns

recovered charge

-

0.161

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 6.

Drain-source on-state resistance as a function

of gate-source voltage

Fig 7.

Forward transconductance as a function of

drain current; typical values

Fig 8.

Transfer characteristics; drain current as a

function of gate-source voltage

Fig 9.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

003a a d781

0

5

10

15

20

25

30

12345

(m

Ω )

003a a d782

0

100

200

300

400

500

0

20

406080

(S )

003aae488

0

20

40

60

80

100

01

23

4

(A)

25 C

003aae491

0

60

120

180

240

300

024

68

10

(A)

10.0

4.0

3.0

3.5

4.5

5.0