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BUK9Y104-100B Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK9Y104-100B Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 14 page BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive systems DC-to-DC converters General purpose power switching Solenoid drivers 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current VGS =5V; Tmb =25°C; see Figure 1; see Figure 3 --14.8 A Ptot total power dissipation Tmb = 25 °C --59 W Static characteristics RDSon drain-source on-state resistance VGS =10V; ID =5A; Tj = 25 °C - 86 99 m Ω VGS =5V; ID =5A; Tj =25°C; see Figure 11; see Figure 12 -91 104 m Ω Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =14.8 A; Vsup ≤ 100 V; RGS =50 Ω; VGS =5V; Tj(init) = 25 °C; unclamped --35 mJ Dynamic characteristics QGD gate-drain charge VGS =5V; ID =5A; VDS =80 V; see Figure 13 -4.7 -nC |
Similar Part No. - BUK9Y104-100B_15 |
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