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BUK9Y53-100B Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK9Y53-100B Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page BUK9Y53-100B_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 30 August 2007 8 of 12 NXP Semiconductors BUK9Y53-100B N-channel TrenchMOS logic level FET VDS = 25 V Tj =25 °C; ID =10A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 14. Gate-source voltage as a function of gate charge; typical values VGS = 0 V See Table note 1 of Table 3 Limiting values. (1) Single-pulse; Tj =25 °C. (2) Single-pulse; Tj = 150 °C. (3) Repetitive. Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values Fig 16. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time VGS (V) 04 3 12 003aab424 20 30 10 40 50 ID (A) 0 Tj = 175 °C Tj = 25 °C QG (nC) 020 15 510 003aab420 2 3 1 4 5 VGS (V) 0 VDS = 14 V VDS = 80 V VSD (V) 0.0 1.0 0.8 0.4 0.6 0.2 003aab419 20 30 10 40 50 IS (A) 0 Tj = 175 °C Tj = 25 °C 003aab224 tAL (ms) 10−3 10 1 10−2 10−1 10 102 IAL (A) 1 (1) (2) (3) |
Similar Part No. - BUK9Y53-100B_15 |
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