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BUK9Y40-55B Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK9Y40-55B Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page BUK9Y40-55B_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 22 February 2008 7 of 12 NXP Semiconductors BUK9Y40-55B N-channel TrenchMOS logic level FET Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Drain-source on-state resistance as a function of drain current; typical values Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature VGS (V) 04 3 12 03np08 10 5 15 20 ID (A) 0 Tj = 25 °C Tj = 175 °C −60 180 120 060 03ng52 1.0 1.5 0.5 2.0 2.5 VGS(th) (V) 0 Tj (°C) min typ max V DS =25V I D =1 mA;VDS = VGS ID (A) 060 40 20 03np11 30 60 90 RDSon (m Ω) 0 VGS (V) = 10 3.0 3.2 3.4 3.6 3.8 5.0 Tj (°C) −60 180 120 060 03nb25 0.8 1.6 2.4 a 0 T j =25 °C a = R DSon R DSon(25°C) |
Similar Part No. - BUK9Y40-55B_15 |
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Similar Description - BUK9Y40-55B_15 |
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