BUK9Y30-75B_15 datasheet(7/13 Pages) PHILIPS

Part #	BUK9Y30-75B

Description	N-channel TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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7 / 13 page

BUK9Y30-75B_4

Product data sheet

Rev. 04 — 10 April 2008

7 of 13

NXP Semiconductors

BUK9Y30-75B

N-channel TrenchMOS logic level FET

Fig 8.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 9.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 10. Forward transconductance as a function of

drain current; typical values

Fig 11. Gate-source threshold voltage as a function of

junction temperature

VGS (V)

05

4

23

1

03no09

20

40

60

ID

(A)

0

Tj = 175 °C

Tj = 25 °C

VDS (V)

010

8

46

2

03no11

50

25

75

100

ID

(A)

0

VGS (V) = 10

5.0

4.2

4.0

3.8

3.6

3.4

3.2

3.0

2.8

2.6

7.0

V

DS =25V

T

j =25 °C; t p = 300 s

ID (A)

040

30

10

20

03no08

30

40

50

gfs

(S)

20

−60

180

120

060

03ng52

1.0

1.5

0.5

2.0

2.5

VGS(th)

(V)

0

Tj (°C)

min

typ

max

T

j =25 °C;VDS =25V

I

D =1 mA;VDS = VGS

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