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BUK9Y27-40B Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK9Y27-40B Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page BUK9Y27-40B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 April 2010 5 of 14 NXP Semiconductors BUK9Y27-40B N-channel TrenchMOS logic level FET 5. Thermal characteristics Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 003aac619 10 -1 1 10 10 2 10 3 1 10 10 2 VDS (V) ID (A) Limit RDSon = VDS / ID 10 μs 100 μs 1ms 10ms 100ms DC Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 --2.53 K/W Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration. 003aac483 10 -2 10 -1 1 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 tp (s) Zth (j-mb) (K/W) δ = 0.5 0.2 0.1 0.05 single shot 0.02 tp T P t tp T δ = |
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