BUK9Y22-30B

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Product data sheet

Rev. 04 — 7 April 2010

3 of 14

NXP Semiconductors

BUK9Y22-30B

N-channel TrenchMOS logic level FET

4.

Limiting values

[1]

Maximum value not quoted. Repetitive rating defined in avalanche rating figure.

[2]

Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[3]

Repetitive avalanche rating limited by an average junction temperature of 170 °C.

[4]

Refer to application note AN10273 for further information.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

--30

V

drain-gate voltage

--30

V

gate-source voltage

-15

-

15

V

drain current

see Figure 4

-

-

37.7

A

-

-

26.65

A

peak drain current

see Figure 4

-

-

150.7

A

total power dissipation

-

-

59.4

W

storage temperature

-55

-

175

°C

junction temperature

-55

-

175

°C

Source-drain diode

source current

-

-

37.7

A

peak source current

-

-

150.7

A

Avalanche ruggedness

non-repetitive

drain-source

avalanche energy

--47

mJ

repetitive drain-source

avalanche energy

see Figure 3

[1][2][3]

[4]

---J