BUK9Y11-30B_1

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 30 August 2007

3 of 12

NXP Semiconductors

BUK9Y11-30B

N-channel TrenchMOS logic level FET

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature

Fig 2.

Continuous drain current as a function of

mounting base temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

0

200

150

50

100

003aab844

40

80

120

(%)

0

003aaa846

0

20

40

60

0

50

100

150

200

(A)

P

der

P

tot

P

tot 25

°C

()

------------------------

100 %

×

=

003aaa847

10

-1

1

10

10

2

10

3

10

-1

1

10

10

2

(A)

DC

t

100

µs

1 ms

10 ms

100 ms