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BUK9Y11-30B Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK9Y11-30B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page BUK9Y11-30B_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 30 August 2007 3 of 12 NXP Semiconductors BUK9Y11-30B N-channel TrenchMOS logic level FET VGS ≥ 5V Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Continuous drain current as a function of mounting base temperature Tmb =25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Tmb (°C) 0 200 150 50 100 003aab844 40 80 120 Pder (%) 0 003aaa846 0 20 40 60 0 50 100 150 200 Tmb (°C) ID (A) P der P tot P tot 25 °C () ------------------------ 100 % × = 003aaa847 10 -1 1 10 10 2 10 3 10 -1 1 10 10 2 VDS (V) ID (A) Limit RDSon = VDS / ID DC t p = 10 µs 100 µs 1 ms 10 ms 100 ms |
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