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BUK7907-55AIE Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK7907-55AIE Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 8 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ni67 0 2 4 6 8 10 12 0 20 40 60 80 100 120 ID (A) RDSon (m Ω) 7 8 6 10 6.5 VGS (V) = 5.5 03ne89 0 0.5 1 1.5 2 -60 0 60 120 180 Tj ( °C) a Tj (°C) −60 180 120 060 03aa32 2 3 1 4 5 VGS(th) (V) 0 max typ min 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max |
Similar Part No. - BUK7907-55AIE_15 |
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Similar Description - BUK7907-55AIE_15 |
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