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BUK7907-40ATC Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK7907-40ATC Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 15 page BUK7907-40ATC_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 February 2009 3 of 15 NXP Semiconductors BUK7907-40ATC N-channel TrenchPLUS standard level FET 4. Limiting values [1] Voltage is limited by clamping. [2] Current is limited by power dissipation chip rating. [3] Continuous current is limited by package. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C [1] -40 V VDGS drain-gate voltage IDG = 250 µA - 40 V VGS gate-source voltage -20 20 V ID drain current Tmb =25°C; VGS =10V; see Figure 2; see Figure 3 [2] - 140 A [3] -75 A Tmb =100 °C; VGS = 10 V; see Figure 2 [3] -75 A IDM peak drain current Tmb =25°C; tp ≤ 10 µs; pulsed; see Figure 3 - 560 A Ptot total power dissipation Tmb =25°C; see Figure 1 - 272 W IDG(CL) drain-gate clamping current pulsed; tp =5ms; δ =0.01 - 50 mA IGS(CL) gate-source clamping current continuous - 10 mA pulsed; tp =5ms; δ =0.01 - 50 mA Visol(FET-TSD) FET to temperature sense diode isolation voltage -100 100 V Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb =25°C [2] - 140 A [3] -75 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 560 A Clamping EDS(CL)S non-repetitive drain-source clamping energy ID =75A; VDS ≤ 40 V; VGS =10V; RGS =10kΩ; unclamped; Tj(init) =25°C -1.4 J Electrostatic Discharge Vesd electrostatic discharge voltage HBM; C = 100 pF; R = 1.5 k Ω -6 kV |
Similar Part No. - BUK7907-40ATC_15 |
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Similar Description - BUK7907-40ATC_15 |
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